Lasers for wide bandgap semiconductors

Uniform, single frequency UV lasers for defect detection, scatterometry, and photoluminescence in advanced wide bandgap semiconductor inspection

The Skylark NX series of DPSS lasers delivers stable, continuous-wave UV output at 320 nm or 349 nm, providing uniform illumination for advanced inspection and metrology of wide bandgap materials.

With low noise, narrow linewidth, and a stable, uniform beam, Skylark NX UV lasers enhance signal-to-noise ratio in dark-field and bright-field wafer inspection, improve spectral accuracy in scatterometry, and enable reproducible excitation for photoluminescence mapping of wide bandgap compounds.

Compared to traditional HeCd sources, Skylark NX DPSS lasers offer higher usable output power, wavelength stability, and longer operational lifetime for high-throughput inspection, defect analysis, and material characterisation of advanced wide bandgap semiconductors.

Uniform intensity

≤ 0.3% RMS

Ensures consistency in inspection and photoluminescence mapping of wide bandgap materials such as SiC, GaN, and AlN.

Stable power

≤ 2.0%

Maintains constant excitation density during extended inspection or mapping sequences, providing repeatable accuracy and reliable comparison across measurements.

Uniform beam

M² ≤ 1.2

Operates with a pure TEM₀₀ mode with ellipticity > 95%, delivering high spatial uniformity, low noise, and efficient power margin for complex optical paths.

Consistent wavelength

± 0.2 pm

Stable wavelength over extended periods, preserving spectral fidelity and enabling accurate material and defect characterisation in compound semiconductors.

Achieve high throughput, high precision inspection of wide bandgap semiconductors with uniform ultraviolet illumination.

With low relative intensity noise, exceptional wavelength stability, and a clean TEM₀₀ beam, Skylark NX UV lasers at 320 and 349 nm provide the uniform ultraviolet illumination required for advanced applications across wafer inspection, LLS haze mapping, OCD scatterometry, and photoluminescence analysis of wide bandgap materials such as SiC, AlN, and GaN:

Wide bandgap material characterisation

Photoresist and materials characterisation require precisely controlled UV exposure to evaluate sensitivity, crosslinking, and outgassing behaviour. The Skylark NX UV DPSS lasers offer stable, uniform continuous-wave output at 320 nm or 349 nm, providing reproducible illumination without the speckle or pulse noise of traditional UV sources. The clean beam profile and wavelength stability enable consistent, quantitative studies of resist performance and material photochemistry.

High-throughput dark-field, bright-field, and TDI inspection

Wafer and reticle defect inspection demands stable, uniform UV illumination to reveal minute particles and surface anomalies at production speeds. Delivering a clean, uniform TEM₀₀ beam at 320 nm or 349 nm, Skylark NX UV DPSS lasers enhance Rayleigh scattering, enabling detection of sub-micron particles, scratches, haze, residues, film voids, and photomask defects such as chrome pinholes and contamination.

Photoluminescence (PL)

Accurate photoluminescence analysis requires uniform, stable UV excitation to characterise wide bandgap semiconductor materials such as GaN, AlGaN, and SiC. Emitting at 320 nm or 349 nm — above the bandgaps of these materials — the Skylark NX UV DPSS lasers deliver clean, CW illumination for consistent excitation density and spectral reproducibility. Their low noise and spatial uniformity enable high resolution PL mapping of defects, dopant uniformity, and epitaxial layer quality.

Haze and surface roughness mapping with laser light scattering (LLS)

Haze and microroughness mapping requires ultra-stable and low noise laser performance to detect weak scattered signals. Skylark NX UV DPSS lasers at 320 nm or 349 nm combine low noise with long term power stability and a clean TEM₀₀ beam. Delivering uniform UV illumination. the lasers enhance Rayleigh scattering sensitivity, enabling precise, repeatable quantification of nanometer-scale surface roughness, haze, and contamination across semiconductor wafers and films.

Scatterometry / Ellipsometry (OCD metrology)

Optical critical dimension (OCD) metrology requires wavelength precision and phase stability to resolve nanometer-scale variations in film thickness, refractive index, and pattern geometry. The Skylark NX UV DPSS lasers deliver narrow linewidth, single frequency continuous-wave output at 320 nm or 349 nm with outstanding wavelength accuracy, coherence, and polarization stability - improving model accuracy and repeatability in scatterometry and ellipsometry systems used for advanced process control.

"An excellent replacement for an Argon or HeCd laser: emission is spectrally pure, efficiency is much better, it provides better longevity with cheaper maintenance, and it is much smaller than our previous laser."

Prof. Ivan Ivanov, Linköping University

FAQS

Single frequency CW DPSS lasers for wide bandgap applications

What wide bandgap materials can be analysed with 320 nm and 349 nm UV lasers?
Both 320 nm and 349 nm ultraviolet wavelengths are ideal for inspection, metrology, and photoluminescence analysis of wide bandgap semiconductors including silicon carbide (SiC), gallium nitride (GaN), and aluminum nitride (AlN).
Why are single frequency CW DPSS lasers suitable for wide bandgap applications?
Continuous-wave (CW) diode-pumped solid-state (DPSS) single-frequency lasers provide the power stability, spectral purity, and wavelength accuracy required for precise inspection and characterization of wide bandgap materials such as SiC, GaN, AlN, and Ga₂O₃. Compared with pulsed or gas lasers, CW DPSS lasers produce a steady, low-noise output that delivers uniform, artifact-free illumination for photoluminescence, scatterometry, and defect inspection. Their narrow linewidth, long coherence length, and exceptional wavelength stability ensure accurate phase-based measurements and repeatable results over long operation periods. The single-frequency continuous output also provides fine control of excitation conditions, improving measurement sensitivity, reducing sample heating, and enabling high-resolution mapping of defects, doping, and material uniformity in wide bandgap semiconductor devices.
Can Skylark NX UV lasers be integrated into existing wide bandgap inspection or metrology systems?
Yes. The Skylark NX UV DPSS lasers are designed for OEM integration. Their continuous, single frequency output and stable TEM₀₀ beam make them drop-in compatible with setups built around 325 nm HeCd or 355 nm sources, typically requiring only minor optical adjustments.

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Expand your wide bandgap inspection capabilities with high power, low noise, ultra-stable precision at 320 or 349 nm. Get in touch to tailor a laser to your application.

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